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MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
DRAWING
25.0+/-0.3 7.0+/-0.5 11.0+/-0.3
1
RoHS Compliance, DESCRIPTION
Silicon MOSFET Power Transistor 520MHz,60W
OUTLINE
RD60HUF1 is a MOS FET type transistor specifically designed for UHF High power amplifiers applications.
4-C2
24.0+/-0.6
FEATURES
High power and High Gain: Pout>60W, Gp>7.7dB @Vdd=12.5V,f=520MHz High Efficiency: 55%typ.on UHF Band
2
10.0+/-0.3
9.6+/-0.3
3
R1.6+/-0.15
0.1 -0.01 4.5+/-0.7 6.2+/-0.7
+0.05
APPLICATION
For output stage of high power amplifiers in UHF Band mobile radio sets.
5.0+/-0.3
18.5+/-0.3
RoHS COMPLIANT
RD60HUF1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter "G" after the Lot Marking.
PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm
ABSOLUTE MAXIMUM RATINGS
(Tc=25C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25C Zg=Zl=50 junction to case RATINGS 30 +/-20 150 20 20 175 -40 to +175 1.0 UNIT V V W
W A C C C/W
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C , UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PARAMETER Zerogate voltage drain current Gate to source leak current Gate threshold voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA f=520MHz ,VDD=12.5V Pin=10W, Idq=2.5A VDD=15.2V,Po=60W(PinControl) f=520MHz,Idq=2.5A,Zg=50 Load VSWR=20:1(All Phase) MIN 1.1 60 50 LIMITS TYP MAX. 400 1 1.45 1.8 65 55 No destroy UNIT uA uA V W % -
Note : Above parameters , ratings , limits and conditions are subject to change.
RD60HUF1
3.3+/-0.2
MITSUBISHI ELECTRIC
1/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Vgs-Ids CHARACTERISTICS 10 8 6 4 2 0
Ta=+25C Vds=10V
RoHS Compliance, TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS. AMBIENT TEMPERATURE
Silicon MOSFET Power Transistor 520MHz,60W
180 CHANNEL DISSIPATION Pch(W) 160 140 120 80 60 40 20 0
0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(C)
Ids(A)
100
0
1
2 Vgs(V)
3
4
Vds-Ids CHARACTERISTICS 10
Ta=+25C
Vds VS. Ciss CHARACTERISTICS 400 350
Vgs=3.1V
8 6
300 Ciss(pF) 250 200 150 100 50 0 0 5 10 Vds(V) 15 20
Ta=+25C f=1MHz
Ids(A)
Vgs=2.8V
4 2 0 0 2 4 6 Vds(V) 8 10
Vgs=2.5V Vgs=2.2V
Vds VS. Coss CHARACTERISTICS 350 300 250 Coss(pF) 200 150 100 50 0 0 5 10 Vds(V) 15 20 10 0 Crss(pF) 30 20
Ta=+25C f=1MHz
Vds VS. Crss CHARACTERISTICS 50 40
Ta=+25C f=1MHz
0
5
10 Vds(V)
15
20
RD60HUF1
MITSUBISHI ELECTRIC
2/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
Pin-Po CHARACTERISTICS 100 100
Po
RoHS Compliance, TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Ta=+25C f=520MHz Vdd=12.5V Idq=2.5A
Silicon MOSFET Power Transistor 520MHz,60W
50 Po(dBm) , Gp(dB) , Idd(A) 40 30 20 10 0 10
Po
100 80 Pout(W) , Idd(A) 80
80
d
d(%)
60 40 20 0 20 30 Pin(dBm) 40
40 20 0 0 5 10 Pin(W)
Gp
Ta=25C f=520MHz Vdd=12.5V Idq=2.5A Idd
40 20 0
15
20
Vdd-Po CHARACTERISTICS 90 80 70 60 Po(W) 50 40 30 20 10 0 4 6 8 10 Vdd(V) 12 14
Ta=25C f=520MHz Pin=10W Idq=2.5A Zg=ZI=50 ohm Po
Vgs-Ids CHARACTERISTICS 2 18 16 14
Idd
+25C
10 8 6 4 2 0 2 3 Vgs(V) 4 +75C -25C Vds=10V Tc=-25~+75C
12 Idd(A) Ids(A) 10 8 6 4 2 0
RD60HUF1
MITSUBISHI ELECTRIC
3/7
10 Jan 2006
d(%)
60
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
RoHS Compliance, TEST CIRCUIT(f=520MHz)
Silicon MOSFET Power Transistor 520MHz,60W
Vgg C1
Vdd
9.1kOHM 100OHM
L3
C3
8.2kOHM
L1 RF-in 56pF
15pF 18pF 520MHz RD60HUF1
L2
C2
RF-OUT 56pF 15pF 24pF 4 10 12 90 100 100 Note:Board material-Teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm Dimensions:mm 18pF 6 8 90 14
12 8
C1:2200pF 10uf in parallel C2:2200pF*2 in parallel C3:2200pF,330uF in parallel L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD60HUF1
MITSUBISHI ELECTRIC
4/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,60W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zout
f=520MHz Zin
f=440MHz Zout f=300MHz Zout
f=440MHz Zin
f=300MHz Zin
Zo=10
Zin , Zout f (MHz)
300 440 520
Zin (ohm)
1.16-j0.06 1.18+j0.09 1.15+j0.86
Zout (ohm)
0.83+j0.14 1.20+j0.58 1.05+j1.09
Conditions Po=70W, Vdd=12.5V,Pin=10W Po=65W, Vdd=12.5V,Pin=10W Po=60W, Vdd=12.5V,Pin=10W
RD60HUF1
MITSUBISHI ELECTRIC
5/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
S12 (mag) 0.012 0.011 0.010 0.008 0.008 0.007 0.005 0.004 0.003 0.002 0.002 0.003 0.003 0.005 0.006 0.006 0.007 0.009 0.009 0.010 0.010 0.012 (ang) 8.6 -10.8 -25.0 -32.2 -39.0 -41.7 -42.3 -40.2 -21.8 -4.8 38.1 38.4 49.4 53.8 54.4 50.3 51.8 56.2 49.6 46.5 47.2 43.8 (mag) 0.788 0.811 0.845 0.869 0.877 0.893 0.930 0.930 0.945 0.957 0.956 0.962 0.965 0.963 0.971 0.973 0.972 0.980 0.978 0.975 0.983 0.984 S22 (ang) -166.6 -177.2 -178.5 178.3 177.0 175.6 172.3 169.2 166.0 162.4 159.5 156.5 153.4 150.1 147.4 144.5 141.5 138.4 136.2 133.1 130.4 128.0
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,60W
RD60HUF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq. [MHz] 10 50 100 150 175 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.909 0.910 0.923 0.935 0.944 0.949 0.957 0.961 0.964 0.969 0.974 0.975 0.977 0.978 0.982 0.983 0.979 0.982 0.985 0.980 0.981 0.981 (ang) -156.8 -177.1 178.6 175.5 173.9 172.5 169.2 166.2 163.3 159.8 157.0 153.8 151.0 147.8 145.1 141.9 139.5 136.7 133.7 130.9 128.0 124.9 S21 (mag) (ang) 30.933 98.0 6.014 75.6 2.796 60.1 1.678 46.1 1.351 40.5 1.109 36.2 0.804 27.2 0.583 18.3 0.450 12.0 0.368 6.8 0.296 2.3 0.238 -3.0 0.209 -6.1 0.178 -14.1 0.155 -17.5 0.136 -19.6 0.113 -17.5 0.104 -20.2 0.103 -33.7 0.084 -27.4 0.083 -35.1 0.071 -28.7
RD60HUF1
MITSUBISHI ELECTRIC
6/7
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD60HUF1
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,60W
Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
RD60HUF1
MITSUBISHI ELECTRIC
7/7
10 Jan 2006

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